Melting point	168-170 ºC
Specific optical rotation	41 º (c=4, 6N HCl)
Water Solubility	41.2 g/L (50 ºC)

SDS/MSDS	S24/25

Source	SDS/MSDS Samples
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Synthetic Route

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Articles

Peer-Reviewed Papers

III-V nanocrystals capped with molecular metal chalcogenide ligands: high electron mobility and ambipolar photoresponse.Wenyong Liu et al.Journal of the American Chemical Society, 135(4), 1349-1357 (2012-12-27) Interplay between crystal phase purity and radial growth in InP nanowires.P J Poole et al.Nanotechnology, 23(38), 385205-385205 (2012-09-06) InP/ZnS as a safer alternative to CdSe/ZnS core/shell quantum dots: in vitro and in vivo toxicity assessment.Virgilio Brunetti et al.Nanoscale, 5(1), 307-317 (2012-11-21) Full visible range covering InP/ZnS nanocrystals with high photometric performance and their application to white quantum dot light-emitting diodes.Xuyong Yang et al.Advanced materials (Deerfield Beach, Fla.), 24(30), 4180-4185 (2012-05-01) Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation.John S Parker et al.Optics express, 20(18), 19946-19955 (2012-10-06) Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires.Martin Hjort et al.ACS nano, 6(11), 9679-9689 (2012-10-16) Electrostatic spin control in InAs/InP nanowire quantum dots.Lorenzo Romeo et al.Nano letters, 12(9), 4490-4494 (2012-08-02) Nitrogen ion implanted InP based photo-switch.Chris Graham et al.Optics express, 20(24), 26696-26703 (2012-11-29) Structural and optical investigation of GaInP quantum dots according to the growth thickness for the 700 nm light emitters.Hwa Sub Oh et al.Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08) Electronic properties of pure and p-type doped hexagonal sheets and zigzag nanoribbons of InP.R C Longo et al.Journal of physics. Condensed matter : an Institute of Physics journal, 25(8), 085506-085506 (2013-02-01) InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.Michele Natrella et al.Optics express, 20(17), 19279-19288 (2012-10-06) Hexagonal geometric patterns formed by radial pore growth of InP based on Voronoi tessellation.Hidetaka Asoh et al.Nanotechnology, 23(21), 215304-215304 (2012-05-04) Fully integrated InGaAs/InP single-photon detector module with gigahertz sine wave gating.Xiao-Lei Liang et al.The Review of scientific instruments, 83(8), 083111-083111 (2012-09-04) A low-power high-speed InP microdisk modulator heterogeneously integrated on a SOI waveguide.Jens Hofrichter et al.Optics express, 20(9), 9363-9370 (2012-04-27) Bidirectional growth of indium phosphide nanowires.Keitaro Ikejiri et al.Nano letters, 12(9), 4770-4774 (2012-08-15) Time-resolved diffuse optical spectroscopy up to 1700 nm by means of a time-gated InGaAs/InP single-photon avalanche diode.Ilaria Bargigia et al.Applied spectroscopy, 66(8), 944-950 (2012-07-18) Integrated InP frequency discriminator for Phase-modulated microwave photonic links.J S Fandiño et al.Optics express, 21(3), 3726-3736 (2013-03-14) VLS growth of alternating InAsP/InP heterostructure nanowires for multiple-quantum-dot structures.Kouta Tateno et al.Nano letters, 12(6), 2888-2893 (2012-05-19) Highly-sensitive and label-free indium phosphide biosensor for early phytopathogen diagnosis.Alberto L D Moreau et al.Biosensors & bioelectronics, 36(1), 62-68 (2012-04-28) 170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits.E Rouvalis et al.Optics express, 20(18), 20090-20095 (2012-10-06) Monolithic InP strictly non-blocking 8×8 switch for high-speed WDM optical interconnection.Myung-Joon Kwack et al.Optics express, 20(27), 28734-28741 (2012-12-25) Comparative cytotoxicity of gold-doxorubicin and InP-doxorubicin conjugates.Xuan Zhang et al.Nanotechnology, 23(27), 275103-275103 (2012-06-20) Serial 100 Gb/s connectivity based on polymer photonics and InP-DHBT electronics.Vasilis Katopodis et al.Optics express, 20(27), 28538-28543 (2012-12-25) Mode-evolution-based polarization rotator-splitter design via simple fabrication process.Wangqing Yuan et al.Optics express, 20(9), 10163-10169 (2012-04-27) Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics.Jongho Lee et al.Small (Weinheim an der Bergstrasse, Germany), 8(12), 1851-1856 (2012-04-03)

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