Melting point	33-37 ºC
Boiling point	57 ºC (22 mmHg)
Flash point	57 ºC

Symbol(GHS)	F;Xn
Hazard Codes	R11;R21/22;R38;R41
SDS/MSDS	S16;S26;S36/37/39

Source	SDS/MSDS Samples
没有数据	没有数据

Synthetic Route

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Name	CAS

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Articles

Peer-Reviewed Papers

Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy.Kazuue Fujita et al.Optics express, 20(18), 20647-20658 (2012-10-06) Electrodeposition of crystalline GaAs on liquid gallium electrodes in aqueous electrolytes.Eli Fahrenkrug et al.Journal of the American Chemical Society, 135(1), 330-339 (2012-12-26) Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.Andrew Lee et al.Optics express, 20(20), 22181-22187 (2012-10-06) Room-temperature electron spin amplifier based on Ga(In)NAs alloys.Yuttapoom Puttisong et al.Advanced materials (Deerfield Beach, Fla.), 25(5), 738-742 (2012-10-31) Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells.G W Shu et al.Optics express, 21 Suppl 1, A123-A130 (2013-02-15) Ion exchange synthesis of III-V nanocrystals.Brandon J Beberwyck et al.Journal of the American Chemical Society, 134(49), 19977-19980 (2012-11-30) High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability.Yulian Cao et al.Optics letters, 37(19), 4071-4073 (2012-10-03) Light-hole quantization in the optical response of ultra-wide GaAs/Al(x)Ga(1-x)As quantum wells.V V Solovyev et al.Journal of physics. Condensed matter : an Institute of Physics journal, 25(2), 025801-025801 (2012-11-28) Gallium arsenide.R J Harrison Occupational medicine (Philadelphia, Pa.), 1(1), 49-58 (1986-01-01) Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide.Akiyo Tanaka Toxicology and applied pharmacology, 198(3), 405-411 (2004-07-28) Transverse spin Seebeck effect versus anomalous and planar Nernst effects in Permalloy thin films.M Schmid et al.Physical review letters, 111(18), 187201-187201 (2013-11-19) InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.Michele Natrella et al.Optics express, 20(17), 19279-19288 (2012-10-06) A highly sensitive hybrid organic-inorganic sensor for continuous monitoring of hemoglobin.Anand Kumar Tatikonda et al.Biosensors & bioelectronics, 45, 201-205 (2013-03-19) Bound states, electron localization and spin correlations in low-dimensional GaAs/AlGaAs quantum constrictions.I I Yakimenko et al.Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 072201-072201 (2013-01-19) Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well.M Baranowski et al.Journal of physics. Condensed matter : an Institute of Physics journal, 25(6), 065801-065801 (2013-01-12) Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation.John S Parker et al.Optics express, 20(18), 19946-19955 (2012-10-06) Experimental and simulation studies of anti-reflection sub-micron conical structures on a GaAs substrate.Yeeu-Chang Lee et al.Optics express, 21 Suppl 1, A36-A41 (2013-02-15) Stoichiometric effect on electrical, optical, and structural properties of composition-tunable In(x)Ga(1-x)As nanowires.Jared J Hou et al.ACS nano, 6(10), 9320-9325 (2012-10-02) Development of polaron-transformed explicitly correlated full configuration interaction method for investigation of quantum-confined Stark effect in GaAs quantum dots.Christopher J Blanton et al.The Journal of chemical physics, 138(5), 054114-054114 (2013-02-15) Piezoelectric control of the mobility of a domain wall driven by adiabatic and non-adiabatic torques.E De Ranieri et al.Nature materials, 12(9), 808-814 (2013-06-12) Characterization and modeling analysis for metal-semiconductor-metal GaAs diodes with Pd/SiO₂ mixture electrode.Shih-Wei Tan et al.PloS one, 7(11), e50681-e50681 (2012-12-12) The metabolism of inorganic arsenic oxides, gallium arsenide, and arsine: a toxicochemical review.Dean E Carter et al.Toxicology and applied pharmacology, 193(3), 309-334 (2003-12-18) [A matrix gallium-arsenide detector for roentgenoraphy].A P Vorob'ev et al.Meditsinskaia tekhnika, (5)(5), 21-26 (2012-11-20) Antireflective disordered subwavelength structure on GaAs using spin-coated Ag ink mask.Chan Il Yeo et al.Optics express, 20(17), 19554-19562 (2012-10-06) An electrically-driven GaAs nanowire surface plasmon source.Pengyu Fan et al.Nano letters, 12(9), 4943-4947 (2012-08-29) Gain-switched pulses from InGaAs ridge-quantum-well lasers limited by intrinsic dynamical gain suppression.Shaoqiang Chen et al.Optics express, 21(6), 7570-7576 (2013-04-03) Noise-induced current switching in semiconductor superlattices: observation of nonexponential kinetics in a high-dimensional system.Yu Bomze et al.Physical review letters, 109(2), 026801-026801 (2012-10-04) Probing temperature-driven flow lines in a gated two-dimensional electron gas with tunable spin-splitting.Yi-Ting Wang et al.Journal of physics. Condensed matter : an Institute of Physics journal, 24(40), 405801-405801 (2012-09-13) Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2 mask.Chao-Wei Hsu et al.Nanotechnology, 23(49), 495306-495306 (2012-11-17) An excellent enzymatic lactic acid biosensor with ZnO nanowires-gated AlGaAs/GaAs high electron mobility transistor.Siwei Ma et al.Nanoscale, 4(20), 6415-6418 (2012-09-07) Evaluation of the carcinogenicity of gallium arsenide.Ernst M Bomhard et al.Critical reviews in toxicology, 43(5), 436-466 (2013-05-28) [I System for control and data processing of GaAs linear array detector of the X-ray scanner].S A Gorokhov et al.Meditsinskaia tekhnika, (5)(5), 44-47 (2013-12-25)

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